PXFC211507SC V1 R250

High Power RF LDMOS FET 150W, 28V, 2110 – 2170MHz

• Broadband internal input and output matching • Typical Pulsed CW performance, 2170 MHz, 28 V, 10 μs pulse width, 10% duty cycle - Output power at P1dB = 150 W - Efficiency = 56% - Gain = 19 dB • Typical single-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR @ 0.01% CCDF, Test Model 1 with 64DPCH - Output power = 32 W - Efficiency = 32% - Gain = 20 dB • Capable of handling 10:1 VSWR @28 V, 150 W (CW) output power • Integrated ESD protection • ESD Rating: Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001) • Low thermal resistance • Pb-free and RoHS compliant

ParametricPXFC211507SC V1 R250
Flange TypeEarless
MatchingI/O
Frequency Band  min  max2110.0MHz  2170.0MHz
P1dB150.0W
Supply Voltage28.0V
Pout32.0W
Gain20.4dB
Test SignalWCDMA
P1dB-
Sales Product NamePXFC211507SC V1 R250
OPNPXFC211507SCV1R250XTMA1
Product Statusactive and preferred
Package NameH-37248G-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size250
Packing TypeTAPE & REEL
Data Sheet
TitleSizeDateVersion
Infineon-PXFC211507SC-DS-v02_00-EN,EN193 KB03 Mar 201502_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Reference Design
TitleSizeDateVersion
Infineon-PXFC211507SC-RD-v02_00-ENEN112 KB23 Mar 201502_00
Package Data
TitleSizeDateVersion
H-37248G-4/2-1 | PXFC211507SCV1R250XTMA1EN344 KB11 Apr 201601_00
EN PXFC211507SC+V1+R250
EN where-to-buy
EN PXFC211507SC+V1+R250
EN PXFC211507SC+V1+R250