SPB80N06S-08

ParametricSPB80N06S-08
RDS (on) (@10V)  max8.0mΩ
RDS (on)  max8.0mΩ
QG125.0nC
VDS  max55.0V
ID  max80.0A
RthJC  max0.5K/W
Ptot  max300.0W
IDpuls  max320.0A
VGS(th)  min  max2.1V  4.0V
Sales Product NameSPB80N06S-08
OPNSPB80N06S08ATMA1
Product Statusnot for new design
Package NamePG-TO263-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size1000
Packing TypeTAPE & REEL
Summary of Features:
  • N-channel - Normal Level -Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Avalanche test
  • Repetive Avalanche up to Tjmax = 175 ° VDD=30 V, ID=80 A, VGS=10 V, RG=2.4 W
  • dv /dt rated
Benefits:
  • world's lowest RDS at 55V (on)  in planar technology
  • highest current capability
  • lowest switching and conduction power losses for highest thermal efficiency
  • robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages
Target Applications:
  • Valves control
  • Solenoids control
  • Lighting
  • Single-ended motors
Data Sheet
TitleSizeDateVersion
SPB 80N06S-08,EN206 KB13 Jul 201201_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 May 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 Mar 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 Jun 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 Jan 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_00-25-44_MA000532034_PG-TO263-3-2.pdf23 KB31 Oct 201301_00
Package Data
TitleSizeDateVersion
PG-TO263-3-2 | SPB80N06S08ATMA1EN423 KB11 Apr 201601_00
EN SPI80N06S-08
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_00-25-44_MA000532034_PG-TO263-3-2.pdf SPB80N06S-08
EN SPB80N06S-08