Silicon Power Diode

600V/1200V Ultra Soft Diode
650V Rapid 1 and Rapid 2 Diode

The Silicon Power Rapid Diode family complements Infineon’s existing high power 600V/650V diode portfolio by filling the gap between SiC diodes and previously released emitter-controlled diodes. They represent a perfect cost/performance balance and target high efficiency applications switching between 18kHz and 100kHz. Rapid 1 and Rapid 2 diodes are optimized to have excellent compatibility with CoolMOS™ and high speed IGBT (Insulated Gate Bipolar Transistor) such as the TRENCHSTOP™ 5 and HighSpeed 3.

Application Notes
TitleSizeDateVersion
Infineon-Application Note Rapid 1 and Rapid 2 Diodes-AN-v01_00-ENEN660 KB24 Oct 201401_00
Product Selection Guide
TitleSizeDateVersion
Selection Guide Rapid 1 and Rapid 2 DiodesEN2 MB24 Oct 201401_00
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Application Brief
TitleSizeDateVersion
Application Brief System Solution Battery Powered Motor DrivesEN712 KB27 Feb 201401_00
Product Brief
TitleSizeDateVersion
Product Brief Rapid 1 and Rapid 2 DiodesEN386 KB14 Mar 201302_00
Additional Product Information
TitleSizeDateVersion
Infineon-Advertisment Rapid 1 and Rapid 2 Diodes-AP-v01_00-ENEN879 KB24 Oct 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure 3D PrinterEN340 KB23 Oct 201501_00
Article
TitleSizeDateVersion
Article - Rapid 1 and 2 Diodes - PSD March 2013EN568 KB14 Mar 2013
Simulation Models
TitleSizeDateVersion
Simulation Model PSpice Silicon Power Diode 600VEN3 KB26 Jul 200701_00
Simulation Model - PSpice Rapid Diodes 1EN3 KB23 Jun 201501_00
Simulation Model PSpice Silicon Power Diode 1200VEN4 KB26 Jul 200701_00
Simulation Model - PSpice Rapid Diodes 2EN3 KB23 Jun 201501_00
EN IDV20E65D1
EN IDV20E65D1
EN IDV20E65D1
EN IDV20E65D1
EN IDV20E65D1
EN silicon-power-diode
EN IDV20E65D1
EN IDV20E65D1
EN IDP30E120
EN IDV20E65D1
EN IDV20E65D1
EN IDW50E60