LTC1155 - Dual High Side Micropower MOSFET Driver
The LTC®1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no external components. Micropower operation, with 8μA standby current and 85μA operating current, allows use in virtually all systems with maximum efficiency.
Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added in series with the current sense to prevent false triggering on high in-rush loads such as capacitors and incandescent lamps.
The LTC1155 operates off of a 4.5V to 18V supply input and safely drives the gates of virtually all FETs. The LTC1155 is well suited for low voltage (battery-powered) applications, particularly where micropower “sleep” operation is required.
The LTC1155 is available in both 8-pin PDIP and 8-pin SO packages.
Features
Typical Application  | Applications
Packaging  |
| Part Number | Package | Temp | Price(1-99) | Price (1k)* |
|---|---|---|---|---|
| LTC1155CN8#PBF | N-8 | C | $3.50 | $2.90 |
| LTC1155CS8#PBF | SO-8 | C | $3.75 | $3.10 |
| LTC1155CS8#TRPBF | SO-8 | C | $3.16 | |
| LTC1155IN8#PBF | N-8 | I | $4.60 | $3.70 |
| LTC1155IS8#PBF | SO-8 | I | $4.90 | $4.00 |
| LTC1155IS8#TRPBF | SO-8 | I | $4.06 |
