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DS1270W：3.3V 16Mb Nonvolatile SRAM

3.3V Nonvolatile SRAMs Provide Up to 16Mb Density

The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles that can be executed, and no additional support circuitry is required for microprocessor interfacing.

Key Features Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times of 100ns Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time Optional industrial (IND) temperature range of -40°C to +85°C

DS1270W: Pin Assignment Applications/Uses Automated Test Equipment (ATE) Automatic Utility Meter Reading Building Energy Management (HVAC) Cable Modems Computers: Desktop, Workstation, Server Digital Television (Receivers, Set-Top Boxes) Modems (Analog, ISDN, DSL) Network Hubs, Switches, Routers Notebook Computers Oscilloscopes Printers and Faxes Programmable Logic Controllers Storage Systems Test and Measurement Equipment

DataSheet

Parametrics

Quality and Environmental Data

• DS1270W.pdf

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• DS1249W：3.3V 2048kb Nonvolatile SRAM
• DS1250W：3.3V 4096k Nonvolatile SRAM

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