A2T18S160W31S: 1805-1995 MHz, 32 W Avg., 28 V Airfast® RF Power LDMOS Transistors
RF ISOs NI-780S-2L2LA NI-780GS-2L2LA Package Image
特性
- Designed for Wide Instantaneous Bandwidth Applications
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
- Optimized for Doherty Applications
- RoHS Compliant
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| A2T18S160W31S, A2T18S160W31GS 1805-1995 MHz, 32 W Avg., 28 V Airfast® RF Power LDMOS Transistors Data... (REV 0) PDF (680.0 kB) A2T18S160W31S | 18 May 2015 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASA00624D, NI-C, 20.57x9.78x3.94, Pitch 90.17, 5 Pins (REV O) PDF (51.1 kB) 98ASA00624D | 09 Dec 2014 |
| 98ASA00658D, NI-C, 20.57x9.78x3.81, Pitch 18.03, 5 Pins (REV O) PDF (45.5 kB) 98ASA00658D | 09 Dec 2014 |
Printed Circuit Boards
- A2T18S160W31S PCB DXF file (REV 5) ZIP A2T18S160W31S_PCB 5/18/2015
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| A2T18S160W31SR3 | Active | 1805 | 1995 | 28 | 51.1 | 129 | 32 @ AVG | W-CDMA | 19.9 @ 1880 | 31.6 | 0.36 | I/O | AB | LDMOS |
| A2T18S160W31GSR3 | Active | 1805 | 1995 | 28 | 51.1 | 129 | 32 @ AVG | W-CDMA | 19.9 @ 1880 | 31.6 | 0.36 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-780GS-2L2LA | 98ASA00624D | MPQ - 250 REELPOQ - 250 BOX | Active | A2T18S160W31GSR3 | A2T18S160W31GSR3.pdf |   | 260 |
| NI-780S-2L2LA | 98ASA00658D | MPQ - 250 REELPOQ - 250 BOX | Active | A2T18S160W31SR3 | A2T18S160W31SR3.pdf | | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- A2T18S160W31S PCB DXF file A2T18S160W31S
- 98ASA00624D, NI-C, 20.57x9.78x3.94, Pitch 90.17, 5 Pins AFT18S260W31S
- A2T18S160W31GSR3.pdf A2T18S160W31S
- 98ASA00658D, NI-C, 20.57x9.78x3.81, Pitch 18.03, 5 Pins AFT18S260W31S
- A2T18S160W31SR3.pdf A2T18S160W31S
