AFT09S200W02N: 716-960 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistors
OM-780-2L, OM-780G-2L Package Images
特性
- Designed for Wide Instantaneous Bandwidth Applications
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
- Optimized for Doherty Applications
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| AFT09S200W02NR3, AFT09S200W02GNR3 716-960 MHz, 56 W AVG., 28 V Airfast® RF Power LDMOS Transistors -... (REV 0) PDF (877.5 kB) AFT09S200W02N | 15 Apr 2014 |
Application Notes (3)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 | 13 May 2009 |
| Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 | 12 Mar 2009 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins (REV C) PDF (68.6 kB) 98ASA10831D | 22 Mar 2016 |
| 98ASA00442D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 3 Pins (REV A) PDF (76.9 kB) 98ASA00442D | 15 Feb 2016 |
Printed Circuit Boards
- AFT09S200W02N 900 MHz PCB DXF file (REV 0) ZIP AFT09S200W02N_900_PCB 4/15/2014
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AFT09S200W02GNR3 | Active | 716 | 960 | 28 | 53 | 200 | 56 @ AVG | W-CDMA | 19.2 @ 960 | 36.5 | 0.35 | I/O | AB | LDMOS | |
| AFT09S200W02NR3 | Active | 716 | 960 | 28 | 53 | 200 | 56 @ AVG | W-CDMA | 19.2 @ 960 | 36.5 | 0.35 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| OM780-2 Gull Cu | 98ASA00442D | MPQ - 250 REELPOQ - 250 REEL | Active | AFT09S200W02GNR3 | AFT09S200W02GNR3.pdf |   | 3 | 260 |
| OM780-2 Straight Cu | 98ASA10831D | MPQ - 250 REELPOQ - 250 REEL | Active | AFT09S200W02NR3 | AFT09S200W02NR3.pdf | | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
- Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- AFT09S200W02N 900 MHz PCB DXF file AFT09S200W02N
- 98ASA00442D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 3 Pins MHT1004N
- AFT09S200W02GNR3.pdf AFT09S200W02N
- 98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins MMRF1017N
- AFT09S200W02NR3.pdf AFT09S200W02N
