BGU8M1UK: SiGe:C Low Noise Amplifier MMIC for LTE

The BGU8M1UK is a Low Noise Amplifier (LNA) for LTE receiver applications. It comes as an extremely small and thin Wafer Level Chip Scale Package (WLCSP). The BGU8M1UK requires one external matching inductor.

The BGU8M1UK adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels it delivers 17 dB gain at a noise figure of 0.7 dB. During high power levels, it temporarily increases its bias current to improve sensitivity.

The BGU8M1UK is optimized for 1805 MHz to 2200 MHz.

Data Sheets (1)
Name/DescriptionModified Date
SiGe:C Low Noise Amplifier MMIC for LTE (REV 1.0) PDF (203.0 kB) BGU8M1UK19 May 2015
Application Notes (1)
Name/DescriptionModified Date
BGU8M1UK LTE LNA evaluation board (REV 2.0) PDF (866.0 kB) AN1159525 Feb 2015
S-Parameters
Ordering Information
ProductStatusPackage version@VCC [min] (V)@VCC [max] (V)@ICC [typ] (mA)Gp [typ] (dB)NF [typ] (dB)Pi(1dB) [min] (dBm)IP3i [min] (dBm)IP3i [typ] (dBm)@VCC (V)Pi(1dB) [typ] (dBm)@f (MHz)
BGU8M1UKActiveNAU0001.53.1170.7-51843
Package Information
Product IDPackage DescriptionOutline VersionReflow/Wave SolderingPackingProduct StatusPart NumberOrdering code(12NC)MarkingChemical ContentRoHS / Pb Free / RHFLeadFree Conversion DateMSLMSL LF
BGU8M1UKReel 13" Q1/T1 in DrypackActiveBGU8M1UKAZ (9340 690 77019)Standard MarkingBGU8M1UKAlways Pb-free11
SiGe:C Low Noise Amplifier MMIC for LTE BGU8M1UK
BGU8M1UK LTE LNA evaluation board BGU8M1UK
BGU8M1UK S-parameter and Noise BGU8M1UK