MMRF1018N: 470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors

TO-270WB/272WB-4 Package Image
特性
  • Capable of Handling 10:1 VSWR, All Phase Angles @ 50 Vdc, 860 MHz, 90 W CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Input Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Excellent Thermal Stability
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 50 Units, 44 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MMRF1018NR1, MMR1018NBR1 470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors - Data Sheet (REV 0) PDF (750.0 kB) MMRF1018N24 Jul 2014
Application Notes (4)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN378912 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN326307 Jun 2006
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR161116 May 2016
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins (REV F) PDF (73.4 kB) 98ASA10575D17 Mar 2016
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D18 Jan 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MMRF1018NR1Active4708605049.59018 @ AVGOFDM22 @ 86028.50.79InputABLDMOS
MMRF1018NBR1Active4708605049.59018 @ AVGOFDM22 @ 86028.50.79InputABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-270 WB-498ASA10577DMPQ - 500 REELPOQ - 500 REELActiveMMRF1018NR1MMRF1018NR1.pdf3260
TO-272 WB-498ASA10575DMPQ - 500 REELPOQ - 500 REELActiveMMRF1018NBR1MMRF1018NBR1.pdf3260
MMRF1018NR1, MMR1018NBR1 470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors - Data Sheet MMRF1018N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins aft09mp055n
MMRF1018NR1.pdf MMRF1018N
98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins MMRF1018N
MMRF1018NBR1.pdf MMRF1018N