MMRF1305H: 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors

NI-780H-4L, NI-780S-4L Package Image
特性
  • Wide Operating Frequency Range
  • Extremely Rugged
  • Unmatched, Capable of Very Broadband Operation
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Integrated ESD Protection Circuitry
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
  • These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.
Data Sheets (1)
Name/DescriptionModified Date
MMRF1305HR5, MMRF1305HSR5 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors - Data Sheet (REV 0) PDF (969.3 kB) MMRF1305H19 Dec 2013
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR161116 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D15 Aug 2016
98ASA10793D (REV A) PDF (47.9 kB) 98ASA10793D21 Mar 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MMRF1305HSR5Active1.820005050100100 @ CW1-Tone27.2 @ 512700.38UnmatchedABLDMOS
MMRF1305HR5Active1.820005050100100 @ CW1-Tone27.2 @ 512700.38UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-780S-498ASA10718DMPQ - 50 REELPOQ - 50 REELActiveMMRF1305HSR5MMRF1305HSR5.pdf260
NI-780-498ASA10793DMPQ - 50 REELPOQ - 50 REELActiveMMRF1305HR5MMRF1305HR5.pdf260
MMRF1305HR5, MMRF1305HSR5 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors - Data Sheet MMRF1305H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
MMRF1305HSR5.pdf MMRF1305H
98ASA10793D MMRF1310H
MMRF1305HR5.pdf MMRF1305H