AFT09MS015N: 136-941 MHz, 16 W, 12.5 V Wideband RF Power LDMOS Transistor

PLD-1.5W Image
特性
  • Characterized for Operation from 136 to 941 MHz
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated ESD Protection
  • Integrated Stability Enhancements
  • Wideband — Full Power Across the Band
  • Exceptional Thermal Performance
  • Extreme Ruggedness
  • High Linearity for: TETRA, SSB
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.
特性
  • Output or Driver Stage VHF Band Mobile Radio
  • Output or Driver Stage UHF Band Mobile Radio
  • Output or Driver Stage for 700-800 MHz Mobile Radio
Data Sheets (1)
Name/DescriptionModified Date
AFT09MS015NT1 136-941 MHz, 16 W, 12.5 V Wideband RF Power LDMOS Transistor - Data Sheet (REV 1) PDF (814.9 kB) AFT09MS015N18 Jul 2014
Application Notes (2)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Fact Sheets (1)
Name/DescriptionModified Date
RFLANDMBFS: RF Mobile Radio Solutions - Fact Sheet (REV 2) PDF (364.6 kB) RFLANDMBFS20 Mar 2014
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP24 Sep 2015
Package Information (1)
Name/DescriptionModified Date
98ASA00476D, PLD, 6.6x5.84x1.74, Pitch 4.6, 3 Pins (REV A) PDF (55.3 kB) 98ASA00476D15 Feb 2016
Printed Circuit Boards
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
AFT09MS015NT1Active13694112.5421616 @ CWCW17.2 @ 870771UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
PLD-1.5W98ASA00476DMPQ - 1000 REELPOQ - 1000 REELActiveAFT09MS015NT1AFT09MS015NT1.pdf3260
AFT09MS015NT1 136-941 MHz, 16 W, 12.5 V Wideband RF Power LDMOS Transistor - Data Sheet aft09ms015n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RFLANDMBFS: RF Mobile Radio Solutions - Fact Sheet mrf1570n
RF Products Selector Guide MMT20303H
Designing with Plastic RF Power Transistors White Paper mrf1570n
AFT09MS015N 760-870 MHz Broadband PCB DXF file AFT09MS015N
AFT09MS015N 870 MHz Narrowband PCB DXF file AFT09MS015N
98ASA00476D, PLD, 6.6x5.84x1.74, Pitch 4.6, 3 Pins aft09ms015n
AFT09MS015NT1.pdf AFT09MS015N