MRF1K50H: 1500 W CW over 1.8-500 MHz, 50 V Wideband RF Power LDMOS Transistor

MRF1K50H: Reference Circuits and Test Fixture
MRF1K50H: NI-1230H-4S Package Image
NXP’s 1500 W MRF1K50 RF Power Transistor Benchmark
特性
  • High Drain-source Avalanche Energy Absorption Capability
  • Unmatched Input and Output
  • Device Can Be Used Single-Ended or in a Push-Pull Configuration
  • Characterized from 30 to 50 V
  • High Rugggedness. Handles 65:1 VSWR.
  • RoHS Compliant
  • Recommended Driver: MRFE6VS25N (25 W)
  • Lower Thermal Resistance Part Available: MRF1K50N
  • This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.
特性
  • Industrial, Scientific, Medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI, diathermy, skin laser and ablation
    • Industrial heating, welding and drying systems
  • Laser generation
  • Plasma etching
  • Particle accelerators
  • MRI, diathermy, skin laser and ablation
  • Industrial heating, welding and drying systems
  • Broadcast
    • Radio broadcast
    • VHF TV broadcast
  • Radio broadcast
  • VHF TV broadcast
  • Aerospace
    • VHF omnidirectional range (VOR)
    • HF and VHF communications
    • Weather radar
  • VHF omnidirectional range (VOR)
  • HF and VHF communications
  • Weather radar
  • Mobile Radio
    • VHF and UHF base stations
  • VHF and UHF base stations
Data Sheets (1)
Name/DescriptionModified Date
MRF1K50H 1500 W CW, 1.8-500 MHz, 50 V Data Sheet (REV 0) PDF (1.1 MB) MRF1K50H24 Jun 2016
Application Notes (3)
Name/DescriptionModified Date
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN1027310 Dec 2015
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C05 Apr 2016
Printed Circuit Boards
Schematics
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF1K50HR5Active1.85005061.815001500 @ PeakPulse23.7 @ 230740.12UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-123098ASB16977CMPQ - 50 REELPOQ - 50 REELActiveMRF1K50HR5MRF1K50HR5.pdf260
MRF1K50H 1500 W CW, 1.8-500 MHz, 50 V Data Sheet mrf1k50h
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
MRF1K50H -- 81.36 MHz ISM参考电路 MRF1K50H
MRF1K50H 230 MHz Narrowband PCB DXF file MRF1K50H
MRF1K50H 81.36 MHz Narrowband PCB DXF file MRF1K50H
MRF1K50H 87.5-108 MHz Broadband PCB DXF file MRF1K50H
MRF1K50H 81.36 MHz Heatsink Drawing MRF1K50H
MRF1K50H 87.5-108 MHz Heatsink Drawing MRF1K50H
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF1K50HR5.pdf MRF1K50H