MRF6VP21KH: 10-235 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFET

NI-1230 Package Image
特性
  • Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20% Power Gain: 24 dB Drain Efficiency: 67.5%
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 Watts Peak Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • CW Operation Capability with Adequate Cooling
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel
Data Sheets (1)
Name/DescriptionModified Date
MRF6VP21KHR6 10-235 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFET (REV 4) PDF (719.8 kB) MRF6VP21KH28 Apr 2010
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (2)
Name/DescriptionModified Date
Industrial, Scientific and Medical Solutions Brochure (REV 9) PDF (1.2 MB) BR159303 Oct 2014
Broadcast Solutions (REV 5) PDF (818.6 kB) BR160708 Sep 2011
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP08 Sep 2011
Package Information (1)
Name/DescriptionModified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C05 Apr 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF6VP21KHR5Not Recommended for New Design10235506010001000 @ PeakPulse24 @ 22567.50.03UnmatchedABLDMOS
MRF6VP21KHR6No Longer Manufactured10235506010001000 @ PeakPulse24 @ 22567.50.03UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-123098ASB16977CMPQ - 50 REELPOQ - 50 BOXNot Recommended for New DesignMRF6VP21KHR5MRF6VP21KHR5.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF6VP21KHR6MRF6VP21KHR6.pdf260
MRF6VP21KHR6 10-235 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFET mrf6vp21kh
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
Industrial, Scientific and Medical Solutions Brochure mw7ic2425n
Broadcast Solutions mrfe6vp8600h
RF Products Selector Guide MMT20303H
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF6VP21KHR5.pdf MRF6VP21KH
MRF6VP21KHR6.pdf MRF6VP21KH