MRF7S24250N: 250 W CW over 2400-2500 MHz, 32 V RF Power LDMOS Transistor

2400-2500 MHz Reference Circuit
OM-780-2L Package Image
特性
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified up to a Maximum of 32 VDD Operation
  • Integrated High Performance ESD Protection
  • Supported by the RF Power Tool
  • RoHS Compliant
特性
  • Industrial Heating and Drying
  • Material Welding
  • Plasma Lighting
  • Scientific
  • Medical: Skin Treatment, Blood Therapy, Electrosurgery
Data Sheets (1)
Name/DescriptionModified Date
MRF7S24250N 250 W CW, 2400-2500 MHz, 32 V Data Sheet (REV 1) PDF (658.1 kB) MRF7S24250N09 Sep 2016
Application Notes (3)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN378912 Mar 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Power Tool System (REV 1) PDF (765.4 kB) BR161031 Aug 2014
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP24 Sep 2015
Package Information (1)
Name/DescriptionModified Date
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins (REV C) PDF (68.6 kB) 98ASA10831D22 Mar 2016
Printed Circuit Boards
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF7S24250NR3Active240025003254250250 @ CWCW14.7 @ 245054.80.26I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
OM780-2 Straight Cu98ASA10831DMPQ - 250 REELPOQ - 250 BOXActiveMRF7S24250NR3MRF7S24250NR3.pdf3260
MRF7S24250N 250 W CW, 2400-2500 MHz, 32 V Data Sheet mrf7s24250n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Power Tool System mrf7s24250n
RF Products Selector Guide MMT20303H
Designing with Plastic RF Power Transistors White Paper mrf1570n
2.45 GHz,250 W评估板 - 兼容射频功率工具 MRF7S24250N
MRF7S24250N 2400-2500 MHz PCB DXF file MRF7S24250N
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins MMRF1017N
MRF7S24250NR3.pdf MRF7S24250N