MRFE6S9060NR1: 470-960 MHz, 14 W Avg., 28 V, Broadband RF Power LDMOS Transistor

TO-270-2 Package Image
特性
  • Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain: 21.1 dB Drain Efficiency: 33% ACPR @ 750 kHz Offset: –45.7 dBc in 30 kHz Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (920-960 MHz) Power Gain: 20 dB Drain Efficiency: 46% Spectral Regrowth @ 400 kHz Offset = –62 dBc Spectral Regrowth @ 600 kHz Offset = –78 dBc EVM: 1.5% rms
  • Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (920-960 MHz) Power Gain: 20 dB Drain Efficiency: 63%
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRFE6S9060NR1 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET (REV 1) PDF (589.9 kB) MRFE6S9060N19 Oct 2007
Application Notes (3)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN378912 Mar 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
Broadcast Solutions (REV 5) PDF (818.6 kB) BR160708 Sep 2011
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A26 Feb 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRFE6S9060NR1Active4709602847.86014 @ AVGN-CDMA21.1 @ 880330.88UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-270-298ASH98117AMPQ - 500 REELPOQ - 500 BOXActiveMRFE6S9060NR1MRFE6S9060NR1.pdf3260
MRFE6S9060NR1 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET mrfe6s9060nr1
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
Broadcast Solutions mrfe6vp8600h
RF Products Selector Guide MMT20303H
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n
MRFE6S9060NR1.pdf MRFE6S9060NR1