MRFE6VP5150N: 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors

TO-270WB-4, TO-270WBG-4 Gull Package Images
特性
  • Wide Operating Frequency Range
  • Extreme Ruggedness
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Integrated ESD Protection Circuitry
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRFE6VP5150NR1, MRFE6VP5150GNR1 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet (REV 1) PDF (995.6 kB) MRFE6VP5150N25 Jul 2014
Application Notes (2)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN198712 May 2004
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP24 Sep 2015
Package Information (2)
Name/DescriptionModified Date
98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins (REV E) PDF (75.2 kB) 98ASA10578D17 Mar 2016
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D18 Jan 2016
Supporting Information (1)
Name/DescriptionModified Date
Rugged Plastic for Industrial Applications (REV 0) PDF (295.3 kB) RF_RUGGED_PLASTIC_INDUSTRIAL_TRN23 May 2014
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRFE6VP5150GNR1Active1.86005051.8150150 @ CWCW26.3 @ 230720.21UnmatchedABLDMOS
MRFE6VP5150NR1Active1.86005051.8150150 @ CWCW26.3 @ 230720.21UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-270 WB-4 GULL98ASA10578DMPQ - 500 REELPOQ - 500 REELActiveMRFE6VP5150GNR1MRFE6VP5150GNR1.pdf3260
TO-270 WB-498ASA10577DMPQ - 500 REELPOQ - 500 REELActiveMRFE6VP5150NR1MRFE6VP5150NR1.pdf3260
MRFE6VP5150NR1, MRFE6VP5150GNR1 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet mrfe6vp5150n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Designing with Plastic RF Power Transistors White Paper mrf1570n
Rugged Plastic for Industrial Applications mrfe6vp5300n
98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins aft09mp055n
MRFE6VP5150GNR1.pdf MRFE6VP5150N
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins aft09mp055n
MRFE6VP5150NR1.pdf MRFE6VP5150N