MRFE6VP6300H: 1.8-600 MHz, 300 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs
NI-780-4, NI-780S-4 Package Image
特性
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Device can be used Single-Ended or in a Push-Pull Configuration
- Qualified Up to a Maximum of 50 VDD Operation
- Characterized from 30 V to 50 V for Extended Power Range
- Suitable for Linear Application with Appropriate Biasing
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- RoHS Compliant
- NI-780-4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
- NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
- These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRFE6VP6300HR3, MRFE6VP6300HSR3 1.8-600 MHz, 300 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs (REV 1) PDF (1.0 MB) MRFE6VP6300H | 29 Jul 2011 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D | 15 Aug 2016 |
| 98ASA10793D (REV A) PDF (47.9 kB) 98ASA10793D | 21 Mar 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRFE6VP6300HR5 | Active | 1.8 | 600 | 50 | 54.8 | 300 | 300 @ CW | 1-Tone | 25 @ 130 | 80 | 0.19 | Unmatched | AB | LDMOS | |
| MRFE6VP6300HSR5 | Active | 1.8 | 600 | 50 | 54.8 | 300 | 300 @ CW | 1-Tone | 25 @ 130 | 80 | 0.19 | Unmatched | AB | LDMOS | |
| MRFE6VP6300HR3 | Not Recommended for New Design | 1.8 | 600 | 50 | 54.8 | 300 | 300 @ CW | 1-Tone | 25 @ 130 | 80 | 0.19 | Unmatched | AB | LDMOS | |
| MRFE6VP6300HSR3 | No Longer Manufactured | 1.8 | 600 | 50 | 54.8 | 300 | 300 @ CW | 1-Tone | 25 @ 130 | 80 | 0.19 | Unmatched | AB | LDMOS |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASA10793D MMRF1310H
- MRFE6VP6300HR3.pdf MRFE6VP6300H
- MRFE6VP6300HR5.pdf MRFE6VP6300H
- 98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
- MRFE6VP6300HSR5.pdf MRFE6VP6300H
- MRFE6VP6300HSR3.pdf MRFE6VP6300H
