MRFE6VP6600N: 1.8-600 MHz, 600 W CW, 50 V Wideband RF Power LDMOS Transistors

OM-780-4L, OM-780G-4L Package Image
特性
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Recommended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W)
  • RoHS Compliant
Data Sheets (1)
Name/DescriptionModified Date
MRFE6VP6600N 600 W CW over 1.8-600 MHz RF Power Data Sheet (REV 0) PDF (1.2 MB) MRFE6VP6600N26 May 2015
Application Notes (3)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN378912 Mar 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP24 Sep 2015
Package Information (2)
Name/DescriptionModified Date
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins (REV B) PDF (69.8 kB) 98ASA10833D22 Mar 2016
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins (REV E) PDF (76.8 kB) 98ASA10834D22 Mar 2016
Printed Circuit Boards
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRFE6VP6600GNR3Active1.86005057.8600600 @ CWCW24 @ 9881UnmatchedABLDMOS
MRFE6VP6600NR3Active1.86005057.8600600 @ CWCW24 @ 9881UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
OM-780G-4L98ASA10834DMPQ - 250 REELPOQ - 250 BOXActiveMRFE6VP6600GNR3MRFE6VP6600GNR3.pdf3260
OM-780-498ASA10833DMPQ - 250 REELPOQ - 250 BOXActiveMRFE6VP6600NR3MRFE6VP6600NR3.pdf3260
MRFE6VP6600N 600 W CW over 1.8-600 MHz RF Power Data Sheet mrfe6vp6600n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Designing with Plastic RF Power Transistors White Paper mrf1570n
MRFE6VP6600N 230 MHz PCB DXF file MRFE6VP6600N
MRFE6VP6600N 87.5-108 MHz PCB DXF file MRFE6VP6600N
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
MRFE6VP6600GNR3.pdf MRFE6VP6600N
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
MRFE6VP6600NR3.pdf MRFE6VP6600N