2N6341: 25 A, 150 V NPN Bipolar Power Transistor

The Power 25A 150 V Bipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications.

Features
  • High Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) 2N6338 VCEO(sus) = 150 Vdc (Min) - 2N6341
  • High DC Current Gain hFE = 30 - 120 @ IC = 10 AdchFE = 12 (Min) @ IC = 25 Adc
  • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
  • Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max) ts = 1.0 µs (Max) tf = 0.25 µs (Max)
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
Simulation Models (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice Model2N6341.LIB (0.0kB)0
Saber Model2N6341.SIN (1.0kB)0
Spice2 Model2N6341.SP2 (0.0kB)0
Spice3 Model2N6341.SP3 (0.0kB)0
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-204 (TO-3)1-07 (32kB)Z
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
High-Power NPN Silicon Transistors2N6338/D (144.0kB)12
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
2N6341GActivePb-freeTO-204-21-07NATray Foam100$7.9198
Specifications
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
2N6341GNPNGeneral Purpose1251503012040200
High-Power NPN Silicon Transistors (144.0kB) 2N6341
PSpice Model 2N6341
Saber Model 2N6341
Spice2 Model 2N6341
Spice3 Model 2N6341
TO-204 (TO-3) 2N6341