CPH3360: Power MOSFET, -30V, 303mΩ, -1.6A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
Features- High speed switching and Low loss
- Small package CPH3 (2.9mm x 2.8mm x 0.9mmt)
- Pb-Free,Halogen Free and RoHS Compliance
- 4V drive
| Benefits- Realize high efficiency of applications
- Small and slim applied set
- Environmental consideration
|
Applications- DC/DC Convertor
- Load switch
| End Products |
Data Sheets (1)
Package Drawings (1)
| Document Title | Document ID/Size | Revision |
|---|
| CPH3 | 318BA (47.7kB) | O |
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| CPH3360-TL-H | Lifetime | Pb-free
Halide free | CPH-3 | 318BA | 1 | Tape and Reel | 3000 | $0.1253 |
| CPH3360-TL-W | Active | Pb-free
Halide free | CPH-3 | 318BA | 1 | Tape and Reel | 3000 | $0.1 |
Specifications
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| CPH3360-TL-W | P-Channel | Single | -30 | 20 | -2.6 | -1.6 | 0.9 | | 532 | 303 | | 2.2 | 0.49 | | 82 | 22 | 16 |
