CPH3455: Power MOSFET, 35V, 104mΩ, 3A, Single N-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
Features- Low On-Resistance :RDS(on)=104mΩ (max) [ID=1.5A, VGS=10V]
- Pb-Free, Halogen Free and RoHS compliance
- ESD Diode-Protected Gate
- 4V drive
| Benefits- Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation
- Environmental Consideration
- ESD Resistance
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Applications | End Products- Server, Fridge, DSLR, Transceiver
- Electronic Bidet Toilet Seat
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Data Sheets (1)
Package Drawings (1)
Document Title | Document ID/Size | Revision |
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CPH3 | 318BA (47.7kB) | O |
Order Information
Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
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CPH3455-TL-H | Active, Not Rec | Pb-free
Halide free | CPH-3 | 318BA | 1 | Tape and Reel | 3000 | $0.1267 |
CPH3455-TL-W | Active | Pb-free
Halide free | CPH-3 | 318BA | 1 | Tape and Reel | 3000 | $0.1093 |
Specifications
Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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CPH3455-TL-W | N-Channel | Single | 35 | 20 | 2.6 | 3 | 1 | | 173 | 104 | | 4 | 0.7 | | 186 | 36 | 22 |