CPH6337: Power MOSFET, -12V, 70mΩ, -3.5A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
Features- High Speed Switching
- 1.8V drive
- Low On-Resistance
- Pb-Free and RoSH compliance
- Halogen Free compliance : CPH6337-TL-W
| Benefits- Reduce dynamic power losses
- Drive at Low Voltage
- Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation
- Environmental Consideration
- Environmental Consideration
|
Applications | End Products- Modem Card
- Multi Function Printer
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Simulation Models (1)
Package Drawings (1)
| Document Title | Document ID/Size | Revision |
|---|
| CPH6 | 318BD (48.0kB) | O |
Data Sheets (1)
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| CPH6337-TL-E | Lifetime | Pb-free | CPH-6 | 318BD | 1 | Tape and Reel | 3000 | $0.158 |
| CPH6337-TL-W | Active | Pb-free
Halide free | CPH-6 | 318BD | 1 | Tape and Reel | 3000 | $0.12 |
Specifications
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| CPH6337-TL-W | P-Channel | Single | -12 | 10 | -1.4 | -3.5 | 1.6 | 115 | 70 | | 5.6 | | 1.6 | | 405 | 145 | 100 |
