NDBA100N10B: Power MOSFET, 100V, 6.9mΩ, 100A, N-Channel

This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This devices is suitable for applications with low gate charge driving or ultra low on resistance requirements.

特性
  • Low On-Resistance
  • Low Gate Charge
  • High Speed Switching
  • 100% Avalanche Tested
  • Pb-Free, Halogen Free and RoHS Compliance
优势
  • Improves Efficiency by reducing Conduction Losses
  • Ease of Drive, Faster Turn-on
  • Reduces dynamic power losses
  • Voltage Overstress Safeguard
  • Environment Friendliness
应用
  • Battery Protection Motor Drive Primary Side Switch Secondary Side Synchronous Rectification
终端产品
  • Multi-Cells Battery Pack (ESS, E-Bike, P-Tool) Other Motor Power Supply
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, 100V, 6.9mOhm, 100A, N-ChannelNDBA100N10B/D (649kB)1Mar, 2015
仿真模型 (1)
Document TitleDocument ID/SizeRevisionRevision Date
NDBA100N10B SPICE PARAMETERNDBA100N10B-SPICE/D (4kB)0Jan, 2015
封装图纸 (1)
Document TitleDocument ID/SizeRevision
D2PAK-3 (TO-263, 3-LEAD)418AJ (59.6kB)B
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NDBA100N10BT4HActivePb-free Halide freePower MOSFET, 100V, 6.9mΩ, 100A, N-ChannelD2PAK-3418AJ1Tape and Reel800$0.9237
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NDBA100N10BT4HN-ChannelSingle1002041001108.2354002,9501,25020
Power MOSFET, 100V, 6.9mOhm, 100A, N-Channel (649kB) NDBA100N10B
NDBA100N10B SPICE PARAMETER NDBA100N10B
D2PAK-3 (TO-263, 3-LEAD) BBS3002