NDD03N40Z: N-Channel Power MOSFET 400V 2.1A 3.4 OHM Single N-Channel DPAK

N-Channel Power MOSFET, 400 V, 3.4 OHM

特性
  • 100% Avalanche Tested
  • Extremely High dv/dt Capability
  • Gate Charge Minimized
  • Very Low Intrinsic Capacitance
  • Improved Diode Reverse Recovery Characteristics
  • Zener−protected
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
NDT03N40Z.rev0.libNDT03N40Z.REV0.LIB (1kB)0
NDT03N40Z.rev0.sinNDT03N40Z.REV0.SIN (1kB)0
NDT03N40Z.rev0.sp2NDT03N40Z.REV0.SP2 (1kB)0
NDT03N40Z.rev0.sp3NDT03N40Z.REV0.SP3 (1kB)0
封装图纸 (2)
Document TitleDocument ID/SizeRevision
DPAK (SINGLE GAUGE) TO-252369C (59.1kB)E
DPAK INSERTION MOUNT369D (51.5kB)C
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
N-Channel Power MOSFETNDD03N40Z/D (122kB)1May, 2014
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NDD03N40Z-1GActivePb-free Halide freeN-Channel Power MOSFET 400V 2.1A 3.4 OHM Single N-Channel DPAKIPAK-4369D3Tube75$0.2376
NDD03N40ZT4GActivePb-free Halide freeN-Channel Power MOSFET 400V 2.1A 3.4 OHM Single N-Channel DPAKDPAK-3369C3Tape and Reel2500$0.2376
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NDD03N40Z-1GN-ChannelSingle400304.52.134006.6452140173
NDD03N40ZT4GN-ChannelSingle400304.52.134006.6452140173
N-Channel Power MOSFET (122kB) NDT03N40Z
NDT03N40Z.rev0.lib NDD03N40Z
NDT03N40Z.rev0.sin NDD03N40Z
NDT03N40Z.rev0.sp2 NDD03N40Z
NDT03N40Z.rev0.sp3 NDD03N40Z
DPAK INSERTION MOUNT NTDV3055L104
DPAK (SINGLE GAUGE) TO-252 NCV8408