NGTB30N120L2: IGBT 1200V 30A FS2 Low VCEsat

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage

Features
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for Low VCEsat
  • 10 µs Short Circuit Capability
Applications
  • Motor Drive Inverter
  • Industrial Switching
  • Welding
Application Notes (3)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT RuggednessAND9127/D (532kB)3Jan, 2016
Paralleling of IGBTsAND9100/D (1251kB)1Mar, 2014
Thermal Calculations for IGBTsAND9140/D (497kB)1Apr, 2014
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT - Field Stop IINGTB30N120L2W/D (100kB)0
Reference Manuals (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT Applications HandbookHBD871/D (7014kB)3Apr, 2014
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-247340AL (32.3kB)C
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
NGTB30N120L2WGActivePb-free Halide freeTO-247340ALNATube30$3.52
Specifications
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB30N120L2WG1200301.71.51.44.44503231010534Yes
IGBT - Field Stop II (100kB) NGTB30N120L2
IGBT Ruggedness NGTG50N60FWG
Paralleling of IGBTs NGTG50N60FLWG
Thermal Calculations for IGBTs NGTG40N120FL2
IGBT Applications Handbook NGTG50N60FWG
TO-247 NGTG40N120FL2