NGTB30N60IHLWG: IGBT, Field Stop (FS), 30 A, 600 V
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in damanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.
Features- Low Saturation Voltage using Trench with Fieldstop Technology
- Low Switching Loss
| Benefits- Low Conduction Loss
- Reduces System Power Dissipation
|
Tutorials (1)
Data Sheets (1)
Application Notes (2)
Package Drawings (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
Reference Manuals (1)
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| NGTB30N60IHLWG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | $1.62 |
Specifications
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB30N60IHLWG | 600 | 30 | 1.8 | 1.2 | 0.28 | | 400 | 23 | 130 | | | 250 | Yes |
