NGTB30N60L2WG: N-Channel IGBT with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V
NGTB30N60L2WG is an N-Channel IGBT with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V.
Features- IGBT VCE(sat)=1.4V(typ) [IC=30A, VGE=15V]
- IGBT IC=100A (Tc=25°C)
- IGBT tf=80ns(typ)
- Low switching loss in higher frequency applications
- Maximum junction temperature Tj=175°C
- Diode VF=1.7V(typ) [IF=30A]
- Diode trr=70ns(typ)
- 5µs short circuit capability
- Pb-Free, Halogen Free and RoHS Compliance
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Applications- Power factor correction of white goods appliance
- General purpose inverter
| End Products |
Application Notes (1)
Data Sheets (1)
Simulation Models (1)
Package Drawings (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AK (51.4kB) | O |
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| NGTB30N60L2WG | Active | Pb-free
Halide free | TO-247 | 340AK | NA | Tube | 30 | $1.73 |
Specifications
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB30N60L2WG | 600 | 30 | 1.4 | 1.7 | 0.31 | 1.14 | 70 | NA | 166 | 5 | NA | 225 | Yes |
