NGTB30N65IHL2: IGBT 650V 30A FS2 Induction Heating
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
Features- Extremely Efficient Trench with Fieldstop Technology
- Low Switching Loss Reduces System Power Dissipation
- Optimized for Low Losses in IH Cooker Application
- TJmax = 175°C
- Soft, Fast Free Wheeling Diode
|
Applications- Inductive Heating
- Soft Switching
|
Tutorials (1)
Data Sheets (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| IGBT | NGTB30N65IHL2W/D (91kB) | 0 | Jun, 2014 |
Application Notes (4)
Package Drawings (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
Reference Manuals (1)
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| NGTB30N65IHL2WG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | $1.62 |
Specifications
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB30N65IHL2WG | 650 | 30 | 1.7 | 1.1 | 0.2 | | 430 | 35 | 135 | | | 219 | Yes |
