NGTB35N65FL2: IGBT 650V 35A FS2 Solar/UPS

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Features
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5µs Short−Circuit Capability
Applications
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Welding
Application Notes (3)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT RuggednessAND9127/D (532kB)3Jan, 2016
Paralleling of IGBTsAND9100/D (1251kB)1Mar, 2014
Thermal Calculations for IGBTsAND9140/D (497kB)1Apr, 2014
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT - Field Stop IINGTB35N65FL2W/D (93kB)2Sep, 2016
Reference Manuals (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT Applications HandbookHBD871/D (7014kB)3Apr, 2014
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-247340AL (32.3kB)C
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
NGTB35N65FL2WGActivePb-free Halide freeTO-247340ALNATube30$1.12
Specifications
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB35N65FL2WG650351.72.20.280.846871255300Yes
IGBT - Field Stop II (93kB) NGTB35N65FL2
IGBT Ruggedness NGTG50N60FWG
Paralleling of IGBTs NGTG50N60FLWG
Thermal Calculations for IGBTs NGTG40N120FL2
IGBT Applications Handbook NGTG50N60FWG
TO-247 NGTG40N120FL2