NGTG30N60FWG: IGBT, 600 V, 30 A, PFC, Low Frequency

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Features
  • Optimized for Very Low VCEsat
  • Low Switching Loss
  • 5µs Short Circuit Capability
Benefits
  • Reduces System Power Dissipation
Applications
  • Solar Inverters
  • Motor Drives
  • Uninterruptible Power Supplies (UPS)
Application Notes (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT RuggednessAND9127/D (532kB)3Jan, 2016
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT only 600V 30A PFCNGTG30N60FW (169.0kB)0
Reference Manuals (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT Applications HandbookHBD871/D (7014kB)3Apr, 2014
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-247340L-02 (57.4kB)F
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
NGTG30N60FWGActivePb-free Halide freeTO-247-3340L-02NATube30$1.38
Specifications
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTG30N60FWG600301.450.650.651705167No
IGBT only 600V 30A PFC (169.0kB) NGTG30N60FWG
IGBT Ruggedness NGTG50N60FWG
IGBT Applications Handbook NGTG50N60FWG
TO-247 NGTG50N60FWG