NTD5802N: Power MOSFET 40V 101A 4.4 mOhm Single N-Channel DPAK

Power MOSFET 40V 101A 4.4 mOhm Single N-Channel DPAK

特性
  • Low RDS(on)
  • Low Capacitance
  • Optimized Gate Charge
  • MSL 1/260C
  • AEC Q101 Qualified
  • 100% Avalanche Tested
  • PbFree Devices
  • DCDC Converters
  • Motor Driver
优势
  • Minimize Conduction Losses
  • Minimizes Driver Losses
  • Minimizes Switching Losses
应用
  • CPU Power Delivery
应用注释 (1)
Document TitleDocument ID/SizeRevisionRevision Date
MOSFET Gate-Charge Origin and its ApplicationsAND9083/D (191kB)1Aug, 2014
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, 40 V, Single N-Channel, 101 A DPAKNTD5802N/D (101kB)7Aug, 2014
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelNTD5802NT4G.LIB (2.0kB)0
Saber ModelNTD5802NT4G.SIN (2.0kB)0
Spice2 ModelNTD5802NT4G.SP2 (2.0kB)0
Spice3 ModelNTD5802NT4G.SP3 (2.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DPAK (SINGLE GAUGE) TO-252369C (59.1kB)E
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NTD5802NT4GActivePb-free Halide freePower MOSFET 40V 101A 4.4 mOhm Single N-Channel DPAKDPAK-3369C1Tape and Reel2500$0.712
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NTD5802NT4GN-ChannelSingle40203.510193.757.84.47515155300850550
Power MOSFET, 40 V, Single N-Channel, 101 A DPAK (101kB) NVD5802N
MOSFET Gate-Charge Origin and its Applications NVD5805N
PSpice Model NVD5802N
Saber Model NVD5802N
Spice2 Model NVD5802N
Spice3 Model NVD5802N
DPAK (SINGLE GAUGE) TO-252 NCV8408