NTMFS4H01NF: Power MOSFET 25V 334A 0.7 mOhm Single N−Channel SO−8FL with Schottky

Power MOSFET 25V 334A 0.7 mOhm Single N−Channel SO−8FL with Schottky

特性
  • Integrated Schottky Diode
  • Low RDS(on)
  • Low input capacitance
优势
  • Increased efficiency
  • Minimize conduction losses
  • Minimize switching losses
应用
  • High Performance DC-DC Converters Point of Load
终端产品
  • Netcom, Telecom Servers
设计和开发工具 (1)
Document TitleDocument ID/SizeRevisionRevision Date
EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T6T8 rev3.5EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T3 AND T6 (4250kB)3.5May, 2015
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DFN5 5X6, 1.27P (SO 8FL)488AA (29kB)M
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
NTMFS4H01NF.REV0.LIB.LIBNTMFS4H01NF.rev0.lib (1kB)0
NTMFS4H01NF.REV0.SIN.SINNTMFS4H01NF.rev0.sin (1kB)0
NTMFS4H01NF.REV0.SP2.SP2NTMFS4H01NF.rev0.sp2 (1kB)0
NTMFS4H01NF.REV0.SP3.SP3NTMFS4H01NF.rev0.sp3 (1kB)0
评估板文档 (5)
Document TitleDocument ID/SizeRevisionRevision Date
25VT6A5VGEVB Bill of Materials ROHS Compliant25VT6A5VGEVB_BOM_ROHS (149kB)0
25VT6A5VGEVB Evaluation Board User's ManualEVBUM2227/D (1508kB)1Apr, 2014
25VT6A5VGEVB Gerber Layout Files (Zip Format)25VT6A5VGEVB_GERBER (366kB)0
25VT6A5VGEVB Schematic25VT6A5VGEVB_SCHEMATIC (317kB)0
25VT6A5VGEVB Test Procedure25VT6A5VGEVB_TEST_PROCEDURE (322kB)1
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, Single N−Channel, 25 V, 334 A, SO−8FLNTMFS4H01NF/D (88kB)2Jan, 2015
评估板与开发工具
产品状况Compliance简短说明
25VT6A5VGEVBIntro PendingPb-freeT6 25V Power MOSFET Evaluation Board
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NTMFS4H01NFT1GActivePb-free Halide freePower MOSFET 25V 334A 0.7 mOhm Single N−Channel SO−8FL with Schottky, 25 V, 334 A, Single N?Channel, SO?8FLSO-8FL / DFN-5488AA1Tape and Reel1500$2.3
NTMFS4H01NFT3GActivePb-free Halide freePower MOSFET 25V 334A 0.7 mOhm Single N−Channel SO−8FL with Schottky, 25 V, 334 A, Single N−Channel, SO−8FLSO-8FL / DFN-5488AA1Tape and Reel5000$2.3
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NTMFS4H01NFT1GN-Channelwith Schottky Diode25202.133412510.737.8855383416175.3
NTMFS4H01NFT3GN-Channelwith Schottky Diode25202.133412510.737.8855383416175.3
Power MOSFET, Single N−Channel, 25 V, 334 A, SO−8FL (88kB) NTMFS4H01NF
EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T6T8 rev3.5 NVD4804N
NTMFS4H01NF.REV0.LIB.LIB NTMFS4H01NF
NTMFS4H01NF.REV0.SIN.SIN NTMFS4H01NF
NTMFS4H01NF.REV0.SP2.SP2 NTMFS4H01NF
NTMFS4H01NF.REV0.SP3.SP3 NTMFS4H01NF
25VT6A5VGEVB BOM ROHS - 149 KB 25VT6A5VGEVB
EVBUM2227/D - 1508 KB 25VT6A5VGEVB
25VT6A5VGEVB GERBER - 366 KB 25VT6A5VGEVB
25VT6A5VGEVB SCHEMATIC - 317 KB 25VT6A5VGEVB
25VT6A5VGEVB TEST PROCEDURE - 322 KB 25VT6A5VGEVB
DFN5 5X6, 1.27P (SO 8FL) NVMFS5C460NL