NTRV4101P: Power MOSFET -20V, -3.2A, 85 mOhm, P-Channel.

Automotive Power MOSFET ideal for low power applications. -20V, -3.2A, 85 mOhm, Single P-Channel, SOT23. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

特性
  • Leading -20 V Trench for Low RDS(on)
  • -1.8 V Rated for Low Voltage Gate Drive
  • SOT-23 Surface Mount for Small Footprint
  • Pb-Free Package is Available
应用
  • Load/Power Management for Portables Load/Power Management for Computing Charging Circuits and Battery Protection
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice modelNTR4101PT1.LIB (1.0kB)0
Saber modelNTR4101PT1.SIN (1.0kB)0
Spice 2 modelNTR4101PT1.SP2 (1.0kB)0
Spice 3 modelNTR4101PT1.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SOT-23318-08 (62.5kB)AP
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Trench Power MOSFET -20 V, -3.2 A, Single P-Channel SOT-23NTR4101P/D (78kB)11Oct, 2014
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NTRV4101PT1GActiveAEC Qualified PPAP Capable Pb-free Halide freePower MOSFET -20V, -3.2A, 85 mOhm, P-Channel., MOSFET -20V -3.2A 85 mOhm Single P-Channel SOT-23SOT-23-3318-081Tape and Reel3000$0.132
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NTRV4101PT1GP-ChannelSingle2081.23.20.73120857.52.2100867510075
Trench Power MOSFET -20 V, -3.2 A, Single P-Channel SOT-23 (75kB) NTRV4101P
PSpice model NTRV4101P
Saber model NTRV4101P
Spice 2 model NTRV4101P
Spice 3 model NTRV4101P
SOT-23 CM1214A