NVD5806N: Power MOSFET 40V, 33A, 19 mOhm, Single N-Channel, DPAK.

Automotive Power MOSFET. 40V, 33A, 19 mOhm, Single N-Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

特性
  • Low RDS(on)
  • High Current Capability
  • Avalanche Energy Specified
  • Pb-Free
应用
  • CCFL Backlight DC Motor Control Power Supply Secondary Side Synchronous Rectification
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelNTD5806NT4G.LIB (2.0kB)0
Saber ModelNTD5806NT4G.SIN (2.0kB)0
Spice2 ModelNTD5806NT4G.SP2 (2.0kB)0
Spice3 ModelNTD5806NT4G.SP3 (2.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DPAK 4 LEAD Single Gauge Surface Mount369AA (62.3kB)B
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, 40 V, 33 A, Single N-Channel, DPAK/IPAKNTD5806N/D (103kB)6Jun, 2014
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NVD5806NT4GActiveAEC Qualified PPAP Capable Pb-free Halide freePower MOSFET 40V, 33A, 19 mOhm, Single N-Channel, DPAK., Power MOSFET 40V 33A 19 mOhm Single N-Channel DPAKDPAK-3369AA1Tape and Reel2500$0.2013
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NVD5806NT4GN-ChannelSingle40202.53340261917860130100
Power MOSFET, 40 V, 33 A, Single N-Channel, DPAK/IPAK (79kB) NVD5806N
PSpice Model NVD5806N
Saber Model NVD5806N
Spice2 Model NVD5806N
Spice3 Model NVD5806N
DPAK 4 LEAD Single Gauge Surface Mount NVD6824NL