SFT1342: Power MOSFET, -60V, 62mΩ, -12A, Single P-Channel

This P-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements.

特性
  • Low On-Resistance
  • High Speed Switching
  • Low Gate Charge
  • ESD Diode - Protected Gate
  • Pb-Free and RoHS Compliance
优势
  • Improves efficiency by reducing conduction losses
  • Reduces dynamic power losses
  • Ease of drive, faster turn-on
  • ESD resistance
  • Environment friendliness
应用
  • FAN Motor, SMPS, DC/DC
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, -60V, 62mOhm, -12A, Single P-ChannelSFT1342/D (354kB)2Sep, 2014
封装图纸 (2)
Document TitleDocument ID/SizeRevision
DPAK / TP-FA369AH (55.0kB)O
IPAK / TP369AJ (51.5kB)O
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
SFT1342-EActive, Not RecPb-freePower MOSFET, -60V, 62mΩ, -12A, Single P-ChannelIPAK / TP369AJNABulk Bag500$0.4736
SFT1342-TL-EActive, Not RecPb-freePower MOSFET, -60V, 62mΩ, -12A, Single P-ChannelDPAK / TP-FA369AH1Tape and Reel700$0.4736
SFT1342-TL-WActivePb-free Halide freePower MOSFET, -60V, 62mΩ, -12A, Single P-ChannelDPAK / TP-FA369AH1Tape and Reel700$0.4147
SFT1342-WActivePb-free Halide freePower MOSFET, -60V, 62mΩ, -12A, Single P-ChannelIPAK / TP369AJNABulk Bag500$0.4147
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
SFT1342-TL-WP-ChannelSingle-6020-2.6-1218762265115011595
SFT1342-WP-ChannelSingle-6020-2.6-1218762265115011595
Power MOSFET, -60V, 62mOhm, -12A, Single P-Channel (354kB) SFT1342
DPAK / TP-FA SFT1452
IPAK / TP SFT1452