This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize input capacitance and gate charge. This devices is suitable for applications with low gate charge driving requirements.
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| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| N-Channel Power MOSFET, 250V, 3A, 2.4Ohm, Single DPAK/IPAK | EN9051/D (1188kB) | 1 | Jun, 2014 |
| Document Title | Document ID/Size | Revision |
|---|---|---|
| DPAK / TP-FA | 369AH (55.0kB) | O |
| IPAK / TP | 369AJ (51.5kB) | O |
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） | ||
|---|---|---|---|---|---|---|---|---|---|
| SFT1452-H | Active, Not Rec | Pb-free Halide free | N-Channel Power MOSFET, 250V, 3A, 2.4Ω, Single DPAK/IPAK | IPAK / TP | 369AJ | NA | Bulk Bag | 500 | |
| SFT1452-TL-H | Active, Not Rec | Pb-free Halide free | N-Channel Power MOSFET, 250V, 3A, 2.4Ω, Single DPAK/IPAK | DPAK / TP-FA | 369AH | 1 | Tape and Reel | 700 | |
| SFT1452-TL-W | Active | Pb-free Halide free | N-Channel Power MOSFET, 250V, 3A, 2.4Ω, Single DPAK/IPAK | DPAK / TP-FA | 369AH | 1 | Tape and Reel | 700 | $0.2933 |
| SFT1452-W | Active | Pb-free Halide free | N-Channel Power MOSFET, 250V, 3A, 2.4Ω, Single DPAK/IPAK | IPAK / TP | 369AJ | NA | Bulk Bag | 500 | $0.2933 |
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SFT1452-TL-W | N-Channel | Single | 250 | 30 | 4.5 | 3 | 26 | 2400 | 4.2 | 210 | 20 | 7 | |||||
| SFT1452-W | N-Channel | Single | 250 | 30 | 4.5 | 3 | 26 | 2400 | 4.2 | 210 | 20 | 7 |
