Super Fast Recovery Diode - RF1001NS2D

RF1001NS2D is Low VF Schottkey Barrier Diode for General rectification.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
RF1001NS2DTLActiveTO-263S(D2PAK)10001000TapingYes

RF1001NS2D Data Sheet

Specifications
Number of terminal3
VRM[V]200
Reverse Voltage VR[V]200
Average Rectified Forward Current IO[A]10.0
IFSM[A]80.0
Forward Voltage VF(Max.)[V]0.93
IF @ Forward Voltage [A]5.0
Reverse Current IR(Max.)[mA]0.01
VR @ Reverse Current [V]200
trr(Max.)[ns]25
IF @ trr [mA]500
IR @ trr [A]1.0
Package Size[mm]10.1x13.1(t=4.5)
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
Package CodeTO-263S(D2PAK)
Package(JEITA)SC-83
Technical Documents
Features
  • Cathode common dual type
  • Low switching loss
  • Low VF
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RB228NS-40Standard Schottky Barrier DiodesDatasheet
RB228NS-40FHAutomotive Schottky Barrier DiodesDatasheet
RB228NS-60Standard Schottky Barrier DiodesDatasheet
RF1001NS2D RF1001NS2D
RB085BM-30FH RB085BM-30FH
RB085BM-60FH RB085BM-60FH
RB095BM-30FH RB095BM-30FH
RB228NS-40 RB228NS-40
RB228NS-40FH RB228NS-40FH
RB228NS-60 RB228NS-60
Spice Model RF1001NS2D
Operation Notes EMD6FHA
Operation Notes RGT8NS65D
Taping Specifications YFZVFH9.1B
Condition Of Soldering EMD6FHA
Storage Conditions YFZVFH9.1B
Quality and Reliability YFZVFH9.1B
Part Explanation YFZVFH9.1B