4V Drive Nch MOSFET (Corresponds to AEC-Q101) - RSD175N10FRA

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
RSD175N10FRATLActiveCPT325002500TapingYes

RSD175N10FRA Data Sheet

Specifications
GradeAutomotive
Common StandardAEC-Q101
Package CodeTO-252(DPAK)
JEITA PackageSC-63
Package Size[mm]6.5x9.5(t=2.3)
Number of terminal3
PolarityNch
Drain-Source Voltage VDSS[V]100
Drain Current ID[A]17.5
RDS(on)[Ω] VGS=4V(Typ.)0.085
RDS(on)[Ω] VGS=4.5V(Typ.)0.08
RDS(on)[Ω] VGS=10V(Typ.)0.075
RDS(on)[Ω] VGS=Drive (Typ.)0.085
Total gate charge Qg[nC]24.0
Power Dissipation (PD)[W]20.0
Drive Voltage[V]4.0
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
Technical Documents
Pin Configuration
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RSD175N10FRA RSD175N10FRA
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model (lib) RSD175N10FRA
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Reliability Information RSD221N06
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series RSJ650N10