N-channel Silicon Carbide Power MOSFET - SCT3080KL

SCT3080KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
SCT3080KLC11ActiveTO-247N45030TubeYes

SCT3080KL Data Sheet

Specifications
Drain-source Voltage[V]1200
Drain-source On-state Resistance(Typ.)[mΩ]80
Drain Current[A]31.0
Total Power Dissipation[W]165
Junction Temperature(Max.)[°C]175
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]175
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