LET20045C:45W 28V 2GHz LDMOS TRANSISTOR

The LET20045C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20045C is designed for high gain and broadband performance operating in common source mode at 36 V. It is ideal for base station applications requiring high linearity.

Key Features

  • Excellent thermal stability
  • Common source configuration
  • POUT (@ 28 V)= 54 W with 13.3 dB gain @ 2000 MHz
  • POUT (@ 36 V)= 65 W with 12.5 dB gain @ 2000 MHz
  • BeO free package
  • In compliance with the 2002/95/EC European directive
Product Specifications
DescriptionVersionSize
DS8575: RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs1.1626 KB
Application Notes
DescriptionVersionSize
AN1294: PowerSO-10RF: the first true RF power SMD package3.21 MB
Presentations
DescriptionVersionSize
LET series: The new LDMOS series for applications from 1 MHz to 2 GHz1.0319 KB
Flyers
DescriptionVersionSize
LET series: latest LDMOS series for applications from 1 MHz to 2 GHz1.0617 KB
Software Development Tools
Part NumberManufacturerDescription
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
Sample & Buy
Part NumberQuantityUnit Price (US$) *PackagePacking TypeECCN (EU)ECCN (US)Country of Origin
LET20045C100054.99M243Loose PieceNECEAR99MOROCCO
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
LET20045CM243IndustrialEcopack1
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs LET20045C
PowerSO-10RF: the first true RF power SMD package PD54003-E
PowerSO-10RF: the first true RF power SMD package LET9060F
PowerSO-10RF: the first true RF power SMD package LET9060F