LET9070CB:70W 28V HF to 2GHz LDMOS TRANSISTOR

The LET9070CB is a common source N-channel enhancement mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9070CB is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.

Key Features

  • Excellent thermal stability
  • Common source configuration
  • POUT (@ 28 V)= 70 W with 16 dB gain @ 945 MHz
  • BeO free package
  • In compliance with the 2002/95/EC European directive
  • Bidirectional ESD
Product Specifications
DescriptionVersionSize
DS9312: RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs2.0719 KB
Application Notes
DescriptionVersionSize
AN1294: PowerSO-10RF: the first true RF power SMD package3.21 MB
HW Model & CAD Libraries
DescriptionVersionSize
LET9070CB ADS model1.0507 KB
Software Development Tools
Part NumberManufacturerDescription
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
Sample & Buy
Part NumberQuantityUnit Price (US$) *PackagePacking TypeECCN (EU)ECCN (US)Country of Origin
LET9070CB--M243Loose PieceNECEAR99MOROCCO
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
LET9070CBM243IndustrialEcopack1
RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs LET9070CB
PowerSO-10RF: the first true RF power SMD package PD54003-E
PowerSO-10RF: the first true RF power SMD package LET9070CB