M48Z58:5 V, 64 Kbit (8 Kb x 8) ZEROPOWER® SRAM

The M48Z58/Y ZEROPOWER®RAM is an 8 Kbit x 8 non-volatile static RAM that integrates power-fail deselect circuitry and battery control logic on a single die. The monolithic chip is available in two special packages to provide a highly integrated battery-backed memory solution.

The M48Z58/Y is a non-volatile pin and function equivalent to any JEDEC standard 8 K x 8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed.

The 28-pin, 600 mil DIP CAPHAThouses the M48Z58/Y silicon with a long life lithium button cell in a single package.

The 28-pin, 330 mil SOIC provides sockets with gold plated contacts at both ends for direct connection to a separate SNAPHAT®housing containing the battery. The unique design allows the SNAPHAT battery package to be mounted on top of the SOIC package after the completion of the surface mount process. Insertion of the SNAPHAT housing after reflow prevents potential battery damage due to the high temperatures required for device surface-mounting. The SNAPHAT housing is keyed to prevent reverse insertion.

The SOIC and battery packages are shipped separately in plastic anti-static tubes or in tape & reel form.

For the 28-lead SOIC, the battery package (e.g., SNAPHAT) part number is “M4Z28-BR00SH1”.

Key Features

  • Integrated, ultra low power SRAM, power-fail control circuit, and battery
  • READ cycle time equals WRITE cycle time
  • Automatic power-fail chip deselect and WRITE protection
  • WRITE protect voltages: (VPFD = power-fail deselect voltage)
    • M48Z58: VCC = 4.75 to 5.5 V; 4.5 V ≤ VPFD ≤ 4.75 V
    • M48Z58Y: VCC = 4.5 to 5.5 V; 4.2 V ≤ VPFD ≤ 4.5 V
  • Self-contained battery in the CAPHAT™ DIP package
  • Packaging includes a 28-lead SOIC and SNAPHAT® top (to be ordered separately)
  • SOIC package provides direct connection for a SNAPHAT® top which contains the battery
  • Pin and function compatible with JEDEC standard 8 Kbit x 8 SRAMs
  • RoHS compliant
    • Lead-free second level interconnect
Product Specifications
DescriptionVersionSize
DS0515: 5 V, 64 Kbit (8 Kbit x 8) ZEROPOWER® SRAM11.1412 KB
Application Notes
DescriptionVersionSize
AN1011: Battery technology used in NVRAM and real-time clock (RTC) products from ST4.0248 KB
AN1009: Negative undershoot NVRAM data corruption2.082 KB
AN1012: Predicting the battery life and data retention period of NVRAMs and serial RTCs4.1439 KB
Product Certifications
DescriptionVersionSize
Products Underwriter Laboratories (UL) Information2.1543 KB
Products Underwriter Laboratories (UL) Information2.1162 KB
Sample & Buy
Part NumberPackagePacking TypeOperating Temperature (°C) (min)Operating Temperature (°C) (max)Unit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
M48Z58-70PC1PDIP 28 .7Tube--8.821000NECEAR99MALAYSIA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
M48Z58-70PC1PDIP 28 .7IndustrialEcopack1
5 V, 64 Kbit (8 Kbit x 8) ZEROPOWER® SRAM M48Z58Y
circuit_diagram_2559_thumbnail.png M48Z58Y
ST NVRAM 和实时时钟(RTC)产品中使用的电池技术 M4Z28-BR00SH
Negative undershoot NVRAM data corruption M48Z58Y
预测NVRAM 和串行RTC 的电池寿命和数据保存期限 M4Z28-BR00SH
Predicting the battery life and data retention period of NVRAMs and serial RTCs M4Z28-BR00SH
Predicting the battery life and data retention period of NVRAMs and serial RTCs M48Z58Y