STAC4932F:1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC Flangeless package

The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications.

The STAC4932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC®.

Key Features

  • Excellent thermal stability
  • Common source push-pull configuration
  • POUT = 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz
  • Pulse conditions: 1 msec - 10%
  • In compliance with the 2002/95/EC European directive
  • ST air cavity packaging technology - STAC® package
Product Specifications
DescriptionVersionSize
DS6726: RF power transistors HF/VHF/UHF N-channel MOSFETs3.1325 KB
Application Notes
DescriptionVersionSize
AN3232: Mounting recommendations for STAC® and STAP® boltdown packages4.01 MB
HW Model & CAD Libraries
DescriptionVersionSize
STAC4932x ADS model1.0417 KB
Software Development Tools
Part NumberManufacturerDescription
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
Sample & Buy
Part NumberQuantityUnit Price (US$) *PackagePacking TypeECCN (EU)ECCN (US)Country of Origin
STAC4932F100067.9STAC244FLoose PieceNECEAR99MOROCCO
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STAC4932FSTAC244FIndustrialEcopack1
RF power transistors HF/VHF/UHF N-channel MOSFETs STAC4932F
Mounting recommendations for STAC® and STAP® boltdown packages STAC0912-250
Mounting recommendations for STAC® and STAP® boltdown packages STAC4932B