2SJ360 Power MOSFET (P-ch single)

DataSheet
Feature
Application ScopeRelay drivers
PolarityP-ch
GenerationL²-π-MOSⅤ
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NamePW-Mini
JEITASC-62
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-1A
Power DissipationPD1.5W
Drain-Source voltageVDSS-60V
Drain-Source voltageVDSS-60V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-155pF
Total gate charge (Typ.)Qg-6.5nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.73Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4V1.2Ω
Documents
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TA79L09F