3SK293 High frequency MOSFET

DataSheet
Feature
Application ScopeTV UHF high frequency amplifier
PolarityN-ch
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NameUSQ
Package CodeSOT-343
Pins4
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID0.03A
Power DissipationPD0.1W
Drain-Source voltageVDSS12.5V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Forward Transfer Admittance (Typ.)|Yfs|-26mS
Drain Current (Max)IDSS-0.1mA
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
3SK293(TE85L,F)Japan3000yes
Documents
Reliability InformationReliability Data[Dec,2013](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogRadio-Frequency Semiconductors[Feb,2015](PDF: 1320KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
2SC5088