MT3S111P Radio-frequency SiGe Heterojunction Bipolar Transistor

DataSheet
Feature
Application ScopeVHF/UHF band low noise, low distortion amplifier
PolarityNPN
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NamePW-Mini
JEITASC-62
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC0.1A
Collector power dissipationPC300mW
Collector power dissipation (mounted on board)PC1000mW
Junction temperatureTj150degC
Collector-emitter voltageVCEO6V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Insertion Gain (Typ.)|S21|2f=1GHz10.5dB
Transition frequency (Typ.)fT-8GHz
Noise Figure (Typ.)NFf=1GHz0.95dB
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
MT3S111P(TE12L,F)Japan1000yes
Documents
Reliability InformationReliability Data[Mar,2016](PDF: 160KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogRadio-Frequency Semiconductors[Feb,2015](PDF: 1320KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
TA79L09F