MT3S19R Radio-frequency bipolar transistor

DataSheet
Feature
Application ScopeVHF/UHF band low noise, low distortion amplifier
PolarityNPN
Number of Circuits1
RoHS Compatible Product(s) (#)Available
Assembly basesThailand
Package Information
Package Image
Toshiba Package NameSOT-23F
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC0.08A
Collector power dissipationPCmounted320mW
Junction temperatureTj150degC
Collector-emitter voltageVCEO6V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Insertion Gain (Typ.)|S21|2f=1GHz13dB
Transition frequency (Typ.)fT-13.5GHz
Noise Figure (Typ.)NFf=1GHz1.5dB
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
MT3S19R,LF(TThailand3000yes
Documents
Reliability InformationReliability Data[Mar,2016](PDF: 59KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogRadio-Frequency Semiconductors[Feb,2015](PDF: 1320KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
SSM3J338R