MT3S19TU Radio-frequency bipolar transistor

DataSheet
Feature
Application ScopeVHF/UHF band low noise amplifier
PolarityNPN
Number of Circuits1
RoHS Compatible Product(s) (#)Available
Package Information
Package Image
Toshiba Package NameUFM
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC0.08A
Collector power dissipationPC900mW
Collector power dissipationPCmounted900mW
Junction temperatureTj150degC
Collector-emitter voltageVCEO6V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Insertion Gain (Typ.)|S21|2f=1GHz13dB
Transition frequency (Typ.)fT-11GHz
Noise Figure (Typ.)NFf=1GHz1.5dB
Documents
CatalogRadio-Frequency Semiconductors[Feb,2015](PDF: 1320KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
2SC6135