MT4S102T Radio-frequency SiGe Heterojunction Bipolar Transistor

DataSheet
Feature
Application ScopeVHF/UHF band low noise amplifier
PolarityNPN
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NameTESQ
Pins4
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC0.02A
Collector power dissipationPC60mW
Junction temperatureTj150degC
Collector-emitter voltageVCEO3V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Transition frequency (Typ.)fT-25GHz
Documents
CatalogRadio-Frequency Semiconductors[Feb,2015](PDF: 1320KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
TA4032FT