SSM6J213FE Small-signal MOSFET

DataSheet
Feature
PolarityP-ch
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NameES6
JEITASC-107C
Package CodeSOT-563
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-2.6A
Drain-Source voltageVDSS-20V
Gate-Source voltageVGSS+/-8V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-290pF
Total gate charge (Typ.)Qg-4.7nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.103Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=2.5V0.133Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=1.8V0.178Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=1.5V0.25Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=4.5V0.0885Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=2.5V0.1075Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=1.8V0.13Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=1.5V0.151Ω
Gate threshold voltage (Max)Vth--1.0V
Gate threshold voltage (Min)Vth--0.3V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
SSM6J213FE(TE85L,FJapan4000yes
Documents
Reliability InformationReliability Data[May,2016](PDF: 160KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
HN1C01FE